Rapid thermal annealing and reduction process monitoring of graphene oxide thin film on chip
Conference: Mikro-Nano-Integration - 9. GMM-Workshop
11/21/2022 - 11/22/2022 at Aachen, Germany
Proceedings: GMM-Fb. 105: Mikro-Nano-Integration
Pages: 4Language: englishTyp: PDF
Authors:
Amiri, Hesam (Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Germany & Department of Chemistry, Materials and Chemical Engineering Giulio Natta, Politecnico di Milano, Italy)
Nikookhesal, Aidin; Murugan, Divagar; Cao, Yuan; Vu, Xuan-Thang; Schnakenberg, Uwe; Ingebrandt, Sven; Pachauri, Vivek (Institute of Materials in Electrical Engineering 1, RWTH Aachen University, Germany)
Scholz, Stefan; Frentzen, Michael; Knoch, Joachim (Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Germany)
Sai, V V Raghavendra (Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai, India)
Narayanan, Madaboosi S. (Department of Biotechnology, Indian Institute of Technology Madras, Chennai, Tamil Nadu, India)
Abstract:
Graphene oxide (GO) is considered as a cost-effective source among the graphene-based materials for various device platforms after its reduction to reduced graphene oxide (rGO). For GO reduction, thermal annealing is a relatively convenient method compatible with top-down batch fabrication processes under precise parameter control. In this work, the influence of temperature changes up to 750 °C over reduction of large area GO thin films is addressed in a systematic manner. For this, the dielectric properties such as electrical and optical permittivity of rGO are characterized using high-precision electrical impedance spectroscopy and spectroscopic ellipsometry, while following the reduction process using Raman spectroscopy. To realize the study platform, GO thin films were prepared, micro-patterned and electrically connected using a standard top-down lithography processes. The optical and electrical permittivity are found to be inversely related to the reduction temperature.