Influence of composition in sputtered multi-layer cavity enhanced Schottky SWIR photodetectors

Abstract:
Detection of short-wave infrared radiation is an emerging field in automation, safety and quality control in production. Schottky photodetectors offer the possibility to achieve infrared radiation detection using Si and fully “complementary metal-oxide-semiconductor”-compatible technology. The limitations of these devices are addressed using a photonic cavity which enhances absorption within thin metal layers which offer increased transition efficiency. Here, the influence of thin sputtered multi-layered films on detector performance is discussed.