Sophisticated 3D Patterning by E-Beam and i-line Grayscale Lithography and followed RIE and DRIE structure transfer to enable future photonic, NEMS and MEMS application fields
Conference: MikroSystemTechnik KONGRESS 2025 - Mikroelektronik/Mikrosystemtechnik und ihre Anwendungen – Nachhaltigkeit und Technologiesouveränität
10/27/2025 - 10/29/2025 at Duisburg, Germany
doi:10.30420/456614077
Proceedings: MikroSystemTechnik Kongress 2025
Pages: 4Language: englishTyp: PDF
Authors:
Schermer, Sebastian; Helke, Christian; Gottwald, Markus; Kohlschreiber, Pia; Bonitz, Jens; Haase, Micha; Umlauf, Georg; Hiller, Karla; Reuter, Danny
Abstract:
The increasing demand for sophisticated patterning technologies for 2.5D and 3D structures, such as micro lens arrays (MLAs), photonic integrated circuits (PICs), and MEMS, is driven by their critical roles in modern optical and electronic applications. MLAs, in particular, are essential for the integration of micro-LED arrays, enhancing device performance through precise light manipulation and improved optical efficiency. This paper investigates the use of grayscale lithography, focusing on electron beam (e-beam) and i-line stepper lithography, to efficiently fabricate these intricate structures while addressing the limitations associated with each method.