Optimized Si-DMS: Reducing Thermal Effects for More Accurate Measurements
Conference: MikroSystemTechnik KONGRESS 2025 - Mikroelektronik/Mikrosystemtechnik und ihre Anwendungen – Nachhaltigkeit und Technologiesouveränität
10/27/2025 - 10/29/2025 at Duisburg, Germany
doi:10.30420/456614095
Proceedings: MikroSystemTechnik Kongress 2025
Pages: 4Language: englishTyp: PDF
Authors:
Frank, Thomas; Pobering, Sebastian; Hermann, Stefan; Gruen, Andre; Kermann, Manuel; Hintz, Michael; Cyriax, Andrea
Abstract:
Silicon strain gauges (Si-DMS) offer up a to 40 times higher sensitivity than metallic strain gauges and exhibit minimal creep effects. Their manufacturing is cost-efficient in and enable more precise measurements. A key advantage is their temperature stability, particularly through optimized material and technology combinations. This article examines the minimization of thermal dependencies of the zero point and span. Si-DMS set new standards in sensor technology and enhance signal stability at high temperatures.