3D-integrated post-CMOS pressure sensor for medical applications

Abstract:
At Fraunhofer IMS a technology is being developed which a) allows the design and manufacture of micro-electromechanical system pressure sensor elements, and b) can be monolithically integrated on 8” complementary metal-oxidesemiconductor wafers, which obtain integrated circuits. The introduced process enables subsequent integration on different ASICs and thus significantly reduces the space required. We introduce the design of the process as well as single critical technology steps and finally show the results for a successfully fabricated pressure sensor on silicon substrate via mechanical bow of the sensors membrane.