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E DIN EN IEC 63550-2 VDE 0884-3550-2:2026-05

Semiconductor devices – Neuromorphic devices

Part 2: Evaluation method of linearity in memristor devices

(IEC 47/2942/CDV:2025); German and English version prEN IEC 63550-2:2025
Class/Status: Draft, valid
Released: 2026 -05 Published: 2026-04 -03
VDE Art. No.: 1801058
End of objection deadline: 2026-06-03

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This part of IEC 63550-2 specifies the test methods for evaluating the linearity of neuromorphic memristor devices. The test methods in this international standard include long term potentiation (LTP), long term depression (LTD), endurance and retention of LTD/LTP, and linearity. This document is applicable to neuromorphic 2-teminal memristor devices without any
limitations prone to device technology and size.

This Document is related to the following Topics (in bold):

31	ELECTRONICS
31.020	Electronic components in general
31.040	Resistors
31.060	Capacitors
31.080	Semiconductor devices
31.120	Electronic display devices
31.140	Piezoelectric devices
31.160	Electric filters
31.180	Printed circuits and boards
31.190	Electronic component assemblies
31.200	Integrated circuits. Microelectronics
31.220	Electromechanical components for electronic and telecommunications equipment
31.240	Mechanical structures for electronic equipment
31.260	Optoelectronics. Laser equipment
35	INFORMATION TECHNOLOGY. OFFICE MACHINES
35.020	Information technology (IT) in general
35.030	IT Security
35.040	Information coding
35.060	Languages used in information technology
35.080	Software. Programms
35.100	Open systems interconnection (OSI)
35.110	Networking
35.160	Microprocessor systems
35.200	Interface and interconnection equipment
35.240	Applications of information technology
35.260	Office machines

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E DIN EN IEC 63550-2 VDE 0884-3550-2:2026-05

Semiconductor devices – Neuromorphic devices

Part 2: Evaluation method of linearity in memristor devices

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