| IEC 60749-34-1:2025Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module 
                200,00 € 
               | 
| IEC TR 63571:2025Semiconductor devices – Estimation method for lifetime conversion from “PART” to “SYSTEM” 
                155,00 € 
               | 
|  | 
| IEC 60749-5:2023Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test 
                40,00 € 
               | 
| IEC 60749-5:2023 RLVSemiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test 
                68,00 € 
               | 
| IEC 63287-2:2023Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile 
                80,00 € 
               | 
| IEC 62951-8:2023Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory 
                80,00 € 
               | 
| IEC 62951-9:2022Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells 
                115,00 € 
               | 
| IEC 63364-1:2022Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection 
                80,00 € 
               | 
| IEC 60749-37:2022Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer 
                155,00 € 
               | 
| IEC 60749-37:2022 RLVSemiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer 
                264,00 € 
               | 
| IEC TR 63357:2022Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles 
                80,00 € 
               | 
| IEC 63068-4:2022Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence 
                155,00 € 
               | 
| IEC 63275-2:2022Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation 
                40,00 € 
               | 
| IEC 60749-10:2022Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly 
                80,00 € 
               | 
| IEC 63275-1:2022Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability 
                80,00 € 
               | 
| IEC 63284:2022Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors 
                80,00 € 
               | 
| IEC 60749-28:2022Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level 
                280,00 € 
               | 
| IEC 60749-28:2022 RLVSemiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level 
                476,00 € 
               | 
| IEC 63373:2022Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices 
                80,00 € 
               | 


