Hybrid 3 GHz Class-E Amplifier with High-Voltage GaAs-HBT
Konferenz: GeMIC 2008 - German Microwave Conference
10.03.2008 - 12.03.2008 in Hamburg-Harburg, Germany
Tagungsband: GeMIC 2008
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Flucke, J.; Meliani, C.; Heinrich, W. (Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin / Germany)
Inhalt:
This paper reports on design methodology and realization of a class–E power amplifier (PA) at 3 GHz using a flipchip- mounted high-voltage GaAs HBT. The circuit achieves 39 dBm output power and 61 % PAE, corresponding to a collector efficiency as high as 79 %. In addition to the large-signal simulation aspects, we discuss particularly the problem of the practical realization of the circuit, especially avoiding parasitics by the package.