Demonstrator of Class-S Power Amplifier based on GaN transistors

Inhalt:
A realized demonstrator of a Class-S Power Amplifier based on GaN transistors is presented. An input signal is prepapred externally in simulative way (ADS, Matlab) and is based on a 4th order Bandpass Δ-Σ modulator definition, and FPGA board is engaged as a signal generator. The demonstrator is based on a Current Switching Class D (CSCD) topology. The presented solution offers an output power of at least 37 dBm (depends on supply voltage). Module efficiency is 20% (30% drain efficiency respectively) for full scale 3GPP Δ-Σ input signal. Center frequency is fixed at 225 MHz, but analyses and measurements requires wider bandwidth.