High-Frequency Time-Domain Measurement Technique for Class-S Amplifiers

Konferenz: GeMIC 2008 - German Microwave Conference
10.03.2008 - 12.03.2008 in Hamburg-Harburg, Germany

Tagungsband: GeMIC 2008

Seiten: 4Sprache: EnglischTyp: PDF

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Wentzel, A.; Meliani, C.; Flucke, J.; Heinrich, W. (Ferdinand-Braun-Institut für Hoechstfrequenztechnik (FBH), 12489 Berlin / Germany)

This paper introduces a measurement system for time-domain characterization of switch-mode amplifiers, particularly those of class-S type with differential output. GaN HEMTs are measured and achieve PAEs of 84% and 87% at 5 and 9 W output powers, respectively. The measurement technique is unique since it provides a differential load at the output, together with DC supply and a high-impedance output for differential probing using a real-time oscilloscope. This allows accurate and fast characterization of transistors in the switched mode.