Application Rules for Accurate IMD Characterization in GaN HEMTs

Konferenz: GeMIC 2008 - German Microwave Conference
10.03.2008 - 12.03.2008 in Hamburg-Harburg, Germany

Tagungsband: GeMIC 2008

Seiten: 4Sprache: EnglischTyp: PDF

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Srinidhi, E. R.; Ma, R.; Kompa, G. (University of Kassel, Fachgebiet Hochfrequenztechnik, Wilhelmshöher Allee 73, D-34121 Kassel, Germany)

This paper presents a fully calibrated 2-channel frequency-domain measurement setup using VSA as receiver for characterizing nonlinear RF devices. This characterization system enables the acquisition and vector error-correction of complex traveling waves at the DUT reference plane. As an application example, 3.2 mm GaN HEMT is characterized under 2-tone and W-CDMA excitation. Influence of DC feed in device distortion behavior has been deeply investigated. Further, based on the experimental analysis, a simple bias tee is designed which can overcome improper DC feed conditions and tested through drain bias sensing on 0.5 mm GaN HEMT.