RF-Measurements of Packaged Broadband Power Transistors
Konferenz: GeMIC 2008 - German Microwave Conference
10.03.2008 - 12.03.2008 in Hamburg-Harburg, Germany
Tagungsband: GeMIC 2008
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Flucke, J.; Heymann, P.; Liero, A.; Heinrich, W. (Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin / Germany)
Inhalt:
Packaging is a key issue of any microwave power transistor. In this paper, we investigate the package-related effects for a 50W GaN-HFET. This includes design of a suitable test fixture and the respective calibration and deembedding. Example measurements of linear and nonlinear parameters of packaged broadband devices are presented.