Technology and perspectives of GaN devices for innovative microwave applications

Konferenz: GeMIC 2008 - German Microwave Conference
10.03.2008 - 12.03.2008 in Hamburg-Harburg, Germany

Tagungsband: GeMIC 2008

Seiten: 4Sprache: EnglischTyp: PDF

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Würfl, Joachim (Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12 489 Berlin, Germany)

GaN technology has matured significantly in the last year. The unique device properties that have been demonstrated are enabling for novel microwave circuit architectures. This paper gives an overview on the general advantages and capabilities of GaN based electronic devices, highlights the basics of GaN device fabrication and gives application examples in the field of discrete power amplifiers, high power and robust low noise GaN based MMICs. The paper ends with a conclusive remark on current device reliability issues.