Model for Power Cycling lifetime of IGBT Modules – various factors influencing lifetime
Konferenz: CIPS 2008 - 5th International Conference on Integrated Power Electronics Systems
11.03.2008 - 13.03.2008 in Nuremberg, Germany
Tagungsband: CIPS 2008
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Bayerer, Reinhold; Licht, Thomas (Infineon Technologies, Warstein, Germany)
Herrmann, Tobias; Lutz, Josef; Feller, Marco (University of Technology, Chemnitz, Germany)
A large number of power cycling data from different IGBT module generations and test conditions have been evaluated. Multiple regression with respect to the variables temperature swing DeltaTJ, TJ, power-on-time (ton), chip thickness, bonding technology, diameter (D) of bonding wire, current per wire bond (I) and package type was performed. It provided parameters for a new empirical model describing number of power cycles (Nf) in relation to these variables. For a fixed module technology and blocking voltage class, the set of variables have been restricted to DeltaTJ, TJ, ton and I as the factors influencing the number of cycles to failure. The model is used to estimate the power cycling capability for the new generation of 1200V-IGBT4 Modules, which are rated up to a junction temperature of 150deg C in operation.