An Investigation of Gate Drive Circuits and Losses in Power Devices of Multilevel Converters for Circuit Integration to Realize High Output Power Density

Konferenz: CIPS 2008 - 5th International Conference on Integrated Power Electronics Systems
11.03.2008 - 13.03.2008 in Nuremberg, Germany

Tagungsband: CIPS 2008

Seiten: 4Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Kamaga, Masamu; Sung, Kyungmin; Hayashi, Yusuke; Sato, Yukihiko; Ohashi, Hiromichi (National Institute of Advanced Industrial Science and Technology)
Kamaga, Masamu; Sato, Yukihiko (Chiba University)
Sung, Kyungmin (Ibaraki National College of Technology)

This paper describes an investigation of gate drive circuits of multilevel converters for circuit integration to realize high output power density (OPD). As key issues to implement the integration, methods for the isolation of the gate signal and the isolated power supplies suitable for the integrated diode-clamped multilevel converters are discussed. The usefulness of these methods has been confirmed by simulation and experimental results. Effectiveness of the multilevel converters on the reduction of the losses in the power devices and the total volume is evaluated for both silicon (Si) and gallium nitride (GaN) lateral devices.