Current limiting with SiC JFET structures

Konferenz: CIPS 2008 - 5th International Conference on Integrated Power Electronics Systems
11.03.2008 - 13.03.2008 in Nuremberg, Germany

Tagungsband: CIPS 2008

Seiten: 4Sprache: EnglischTyp: PDF

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Tournier, Dominique; Bergogne, Dominique; Hamoud, Asif; Planson, Dominique; Mousa, Rami; Morel, Hervé; Allard, Bruno; Brevet, Olivier (AMPERE, INSA-Lyon, F-69621, France)

We propose the use of conventional JFIIT switches as specific devices (CCLD). SiC-JFETs electro-thermal static characterization are reported. Electro-thermal simulation have been carried out to estimate dynamic behaviour of both discret JFETs used as current limiting devices and laboratory specific devices. Surge capabilities have been investigated. It can be concluded that SiC-JFETs might be used not only as switches but also as limiting devices for the safety of both consumer electronics application as well as for power distribution.