Sewiolo, Benjamin; Fischer, Georg; Weigel, Robert (Institute for Electronics Engineering, University of Erlangen-Nuremberg, Cauerstr. 9, 91058 Erlangen, Germany)
In this paper the analysis, design and characterization of a 12 GHz high-linearity distributed amplifier for ultrawideband applications are presented. The amplifier is fabricated in a low-cost 0.25 µm SiGe BiCMOS technology. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line. The collector line has been tapered for efficiency improvement. 12 dBm output power have been measured at the 1- dB compression point (P1dB) in the desired frequency range with an associated gain of 11 dB and a gain flatness of ±1 dB. The power dissipation of the amplifier is 132mW from a 3.3V supply. The chip size is 1.69mm2. Good agreement between simulation and measurement have been achieved.