High Power, High Linearity and Low-Noise Hybrid RF Amplifiers Based on GaN HEMTs
Konferenz: GeMiC 2009 - German Microwave Conference
16.03.2009 - 18.03.2009 in München, Germany
Tagungsband: GeMiC 2009
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Khalil, Ibrahim; Rudolph, Matthias; Liero, Armin; Neumann, Mark; Heinrich, Wolfgang (Ferdinand-Braun-Institut, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany)
Inhalt:
This paper details the potential of GaN HEMT technology for RF high power amplifiers (HPA), low noise amplifiers (LNA) and high linearity amplifiers with practical application examples. Large GaN HEMT powerbars are measured in a 50-Ω-system at 2 GHz. Measurements show excellent characteristics in terms of power, linearity and noise. This combination of high power and low noise performance allows the realization of highly linear LNAs, which could significantly reduce protection and filter efforts at receiver inputs.