Wideband Resistive Ring Mixer for Automotive and Industrial Applications in 0.13 µm CMOS

Konferenz: GeMiC 2009 - German Microwave Conference
16.03.2009 - 18.03.2009 in München, Germany

Tagungsband: GeMiC 2009

Seiten: 4Sprache: EnglischTyp: PDF

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Issakov, Vadim; Thiede, Andreas (Dept. of High-Frequency Electronics, University of Paderborn, Warburgerstr. 100, 33098 Paderborn, Germany)
Verweyen, Ludger (Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany)
Maurer, Linus (3Danube Integrated Circuit Engineering GmbH, Freistädterstr. 400, A-4040 Linz, Austria)

In this paper we present a wideband inductorless resistive down-conversion ring mixer in standard 0.13 µm CMOS technology. This mixer offers a conversion loss of 7.8 - 14.5 dB over a frequency range 19 - 26.5 GHz. Moderate LO power of 6 dBm is required to achieve the lowest conversion loss. The circuit offers high linearity with input-referred 1dB compression point of 5.1 dBmand IIP3 of 11.9 dBm. The passive resistive mixer ring itself does not consume current, whilst the bias network, integrated on-chip for setting up a potential at the gates to reduce the conversion loss, consumes only 0.2 mAfrom 1.5 Vsupply. The circuit exhibits very good isolation between the ports, being higher than 28 dB for the whole frequency range. The circuit active area is very small 0.022 mm2 due to absence of inductors. The chip area including the pads is 0.235 mm2.