79GHz Integrated Antenna on Low Resistivity Si BiCMOS exploiting above-IC processing

Konferenz: EuCAP 2009 - 3rd European Conference on Antennas and Propagation
23.03.2009 - 27.03.2009 in Berlin, Germany

Tagungsband: EuCAP 2009

Seiten: 5Sprache: EnglischTyp: PDF

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Pinto, Y.; Person, C. (Lab-STICC/TELECOM Bretagne, CS 83818, 29238 Brest Cedex 03, France)
Gloria, D.; Cathelin, A.; Belot, D.; Pruvost, S. (STMicroelectronics, Technology R&D 50 Rue Jean Monnet, 38926 Crolles, France)
Plana, R. (LAAS-CNRS, 7 avenue du colonel roche, 31077, Toulouse, France)

This paper analyses the antenna implementation on BiCMOS technology. A dipole antenna, working at 79GHz, is implemented and manufactured. The radiation simulated results reveal low gain (-6.8dBi with IE3D and –8.5 with FEKO) and low radiation efficiency (8.9% with IE3D, 10.39% with FEKO), as expected. Classical techniques to optimise these performances require complex fabrication process. An alternative solution based on “masking” technique is presented offering low cost and good performance advantages. In this way, +2.65dBi of gain and 37% of radiation efficiency are obtained with an antenna implemented on BiCMOS technology with post-IC processing.