SEM image contrast modeling for mask and wafer metrology

Konferenz: EMLC 2009 - 25th European Mask and Lithography Conference
12.01.2009 - 15.01.2009 in Dresden, Germany

Tagungsband: EMLC 2009

Seiten: 11Sprache: EnglischTyp: PDF

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Frase, C. G.; Johnsen, K.-P.; Häßler-Grohne, W.; Bosse, H. (PTB, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany)
Gnieser, D.; Tutsch, R. (Technische Universität Braunschweig, Institut für Produktionsmesstechnik IPROM, Schleinitzstraße 20, 38106 Braunschweig, Germany)

Scanning electron microscopy (SEM) is widely used as a fast and high resolution measurement method capable to perform characterizations of the smallest isolated and dense features which are to be specified and produced on photomasks and wafers down to the 32 nm node and below. Furthermore, electron beam writing tools for mask or direct wafer patterning need electron beam based metrology capabilities for the required high precision alignment purposes. All of these applications benefit from a proper physical understanding of the electron interaction processes in the measured features of interest and suitable simulation capabilities in order to model the measured SEM image or signal contrasts. In this contribution we will report on a new Monte Carlo based modular simulation package, developed at the PTB and called MCSEM, which allows to model secondary as well as backscattered electron image contrasts on 3-dimensional object features. The fundamentals, basic features as well as first applications of the new simulation package MCSEM in the nanometrology field will be explained. Where appropriate, also other existing Monte Carlo based simulation packages still are in use at the PTB, examples and comparisons with the new MCSEM simulation will be given.