Advanced proximity matching with Pattern Matcher

Konferenz: EMLC 2009 - 25th European Mask and Lithography Conference
12.01.2009 - 15.01.2009 in Dresden, Germany

Tagungsband: EMLC 2009

Seiten: 9Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Serebryakov, Alexander; Brige, Lionel (ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands)
Boisseau, Emmanuel; Peloquin, Eric; Coutellier, Vincent; Planchot, Jonathan (ST Microelectronics 850, Rue Jean Monnet, F-38921 Crolles, France)

In a semiconductor factory, each lithographic scanner is combined with a laser source and a track to form a lithocell. Quite frequently, lithographers have to deal with running the same lithographic process on multiple lithocells. Usually a new process is developed for one cell, and then transferred to other cells. However, small but non-negligible differences between lithocells, may result in yield losses. Nevertheless, several scanner’s parameters (called proximity manipulators) can be used to compensate for these differences and match the secondary lithocells to the reference one. Recently a new advanced process matching methodology called Pattern Matcher has been developed. Using this method, we performed successful proximity matching of several ArF scanners in the production environment. In this paper, we discuss the principles of Pattern Matcher approach as well as methodology for data acquisition and present results of our matching.