EUV Actinic Defect Inspection and Defect Printability at sub-32 nm Half-pitch

Konferenz: EMLC 2009 - 25th European Mask and Lithography Conference
12.01.2009 - 15.01.2009 in Dresden, Germany

Tagungsband: EMLC 2009

Seiten: 7Sprache: EnglischTyp: PDF

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Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank (SEMATECH 255 Fuller Road, Suite 309, Albany, NY 12203 USA)
Han, Hakseung (Photomask Team, Samsung electronics, Ban-Wol, Hwasung, Kyunggi, 445-701Korea)
Goldberg, Kenneth; Mochi, Iacopo; Gullikson, Eric (2-400, Lawrence Berkeley National Laboratory, Berkeley, CA 94720)

EUV mask blanks with embedded phase defects were inspected with a reticle Actinic Inspection Tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMATECH’s MBDC, in Albany, with sensitivity to multilayer defects down to 40~45 nm, which is not likely sufficient for mask blank development below the 32-nm half pitch node. Simulation of phase defect printability was then performed to calculate required defect sensitivity for the next generation blank inspection tool, required to support reticle development for the sub-32nm half pitch technology node. Defect mitigation technology is proposed to take advantage of the blankmask with some defect. This technology will reduce the cost of ownership of EUV blankmask. This paper will also discuss what kind of infrastructure that will be required in development stage and mass production stage.