Electric field aligned growth and characterization of carbon nanotube transistors

Konferenz: Mikro-Nano-Integration - 1. GMM-Workshops
12.03.2009 - 13.03.2009 in Seeheim, Germany

Tagungsband: Mikro-Nano-Integration

Seiten: 3Sprache: EnglischTyp: PDF

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Häffner, Michael; Fischer, Eugen; Federsel, Peter; Fleischer, Monika; Kern, Dieter P. (Universität Tübingen, Auf der Morgenstelle 10, 72076 Tübingen)

In this work, we investigate the controlled growth and characterization of carbon nanotube (CNT) based transistor devices. We emphasize the implementation of these nanometer sized transistors using microtechnology and demonstrate methods to characterize he properties of these devices. In short, control over the position of a CNT is achieved via positioning of catalyst material using optical lithography and chemical vapour deposition (CVD) growth from this catalyst island. The orientation of the as grown CNT is controlled by an electric field that is applied between microelectrodes underneath the catalyst island. In order to visualize the geometry of the CNT we apply the method of voltage contrast enhancement in the scanning electron microscope (SEM).