Sapphire on silicon assembly using a nanostructured compliant interface

Konferenz: Mikro-Nano-Integration - 1. GMM-Workshops
12.03.2009 - 13.03.2009 in Seeheim, Germany

Tagungsband: Mikro-Nano-Integration

Seiten: 4Sprache: EnglischTyp: PDF

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Stranz, A.; Sökmen, Ü.; Peiner, E.; Waag, A. (Technical University Braunschweig, Germany)

A low temperature joining technique is described to connect nanostructured silicon with sapphire thereby reducing the stress due to temperature. Fabrication concept of nanopillars in silicon by using ICP-Cryo-dry etching will be reported. The joining process will be shown as well as investigations of residual bending and bond quality. Joining of nanostructured silicon with silver plates at different temperatures will be presented.