Modeling a Power MOSFET for EMC analysis
Konferenz: ISTET 2009 - VXV International Symposium on Theoretical Engineering
22.06.2009 - 24.06.2009 in Lübeck, Germany
Tagungsband: ISTET 2009
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Thamm, Sven; Leone, Marco (Otto-von-Guericke-University Magdeburg)
Inhalt:
This paper presents an efficient approach to model the behavior of a Power MOSFET for EMC simulation purposes. The SPICE-compatible circuit description of the macromodel ensures the integration in different simulation environments. The suggested macromodeling technique is demonstrated for a typical application in power electronics. Validation is carried out by comparison with reference simulations using a standard SPICE library MOSFET model.