Integrated Active Sensors for Near-Field Scanning
Konferenz: ISTET 2009 - VXV International Symposium on Theoretical Engineering
22.06.2009 - 24.06.2009 in Lübeck, Germany
Tagungsband: ISTET 2009
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Uddin, Nasir; Thiede, Andreas (University of Paderborn)
Spang, Matthias (Friedrich-Alexander University)
Mager, Thomas (Fraunhofer Research Institution for Electronic Nano Systems)
Inhalt:
This paper describes the design, simulation and measurement of integrated active sensors in OMMIC ED02AH GaAs technology for near-field scanning. Electromagnetic field simulation and on-wafer measurement have been performed for the miniature integrated sensors (loop and dipole). Two wide-band amplifiers with a gain of 22 dB and 28 dB respectively and a bandwidth of about 10 GHz are designed and measurement results are presented. Finally, frequency responses of the active sensors are reported.