High Speed Wavelength Conversion in a Heterogeneously Integrated Disc Laser Over Silicon On Insulator for Network on a Chip Applications

Konferenz: ECOC 2009 - 35th European Conference on Optical Communication
20.09.2009 - 24.09.2009 in Vienna, Austria

Tagungsband: ECOC 2009

Seiten: 2Sprache: EnglischTyp: PDF

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Raz, O.; Dorren, H. J. S. (Eindhoven University of Technology, Den Dolech 2, 5600MB, Eindhoven, The Netherlands)
Liu, L.; Thourhout, D. Van (INTEC, Ghent University - IMEC, St-Pietersnieuwstraat 41, 9000 Ghent, Belgium)
Rojo-Romeo, P. (Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully 69134, France)
Fédéli, J. M. (CEA-LETI, Minatec 17 rue des Martyrs, 308054 Grenoble, France)

We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc- Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.