Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s

Konferenz: ECOC 2009 - 35th European Conference on Optical Communication
20.09.2009 - 24.09.2009 in Vienna, Austria

Tagungsband: ECOC 2009

Seiten: 2Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Klinger, S.; Grözing, M.; Zaoui, W. Sfar; Berroth, M. (Institute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Germany)
Kaschel, M.; Oehme, M.; Kasper, E.; Schulze, J. (Institute for Semiconductor Engineering (IHT), University of Stuttgart, Germany)

Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm. The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Random Bit Sequence (PRBS) length of 27-1, the Bit Error Ratio (BER) is smaller than 10-12.