Compact RF Model for S-Parameter Characteristics of RF-MEMS Capacitive Switches
Konferenz: MikroSystemTechnik - KONGRESS 2009
12.10.2009 - 14.10.2009 in Berlin, Germany
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Kaynak, M.; Tillack, B. (IHP, Im Technologiepark 25, 15236 Frankfurt/Oder)
Zihir, S.; Gurbuz, Y. (Sabanci University, Orhanli - Tuzla, 34956 Istanbul, Turkey)
In this work, a capacitive-type MEMS switch was designed and simulated using Agilent(R) MOMENTUM solver. The RF performance of the switch was characterized up to 100GHz. Furthermore, an equivalent circuit model was generated for this switch. RLC component values were extracted from FEM simulations. Required small-signal model was created for two states of MEMS switch, “up” and “down”. For both states, the S-parameter data were extracted and compared. It is observed that the S-parameter results for small-signal model are in good agreement with FEM simulations.