Stress Measurement with High Spatial Resolution on microsystem components

Konferenz: MikroSystemTechnik - KONGRESS 2009
12.10.2009 - 14.10.2009 in Berlin, Germany

Tagungsband: MikroSystemTechnik

Seiten: 3Sprache: EnglischTyp: PDF

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Vogel, Dietmar; Michel, Bernd (Fraunhofer ENAS, Micro Materials Center Chemnitz, Deutschland)
Gollhardt, Astrid (Fraunhofer IZM, MicroMaterials Center Berlin, Deutschland)

Residual stresses in MEMS often are critical issues with regard to the functionality and the mechanical-thermal reliability of devices. Most of the currently available stress measurement methods possess severe limitations with respect to the accessible materials, the measurement and spatial resolution, as well as the requested a-priori knowledge on the stress state and its development. For that reason new approaches of local stress measurement have been developed and tested on different components. The utilized methods comprise methods of local stress relief, EBSD and Raman based techniques.