A Novel Built-In Methodology for Screening LDMOS transistors to Achieve Zero Defects in the Automotive Environment
Konferenz: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
16.03.2010 - 18.03.2010 in Nuremberg, Germany
Tagungsband: CIPS 2010
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Malandruccolo, Vezio; Ciappa, Mauro; Fichtner, Wolfgang (Swiss Federal Institute of Technology (ETH) - Integrated Systems Laboratory, Switzerland)
Rothleitner, Hubert (Infineon Technologies AG, Villach, Austria)
Efficient screening procedures for the control of the defectivity are vital to limit early failures especially in critical automotive applications. Traditional strategies based on burn-in and in-line tests are able to provide the required level of reliability but they are expensive and time consuming. This paper presents a novel built-in reliability testing methodology to screen out gate oxide and crystal related defects in Lateral Diffused MOS transistors. The proposed technique is based on an embedded circuitry that includes logic control, high voltage generation, and leakage current monitoring.