The Future of Wire Bonding is? Wire Bonding!
Konferenz: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
16.03.2010 - 18.03.2010 in Nuremberg, Germany
Tagungsband: CIPS 2010
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Siepe, Dirk; Bayerer, Reinhold (Infineon Technologies AG, Max-Planck-Str. 5, 59581 Warstein, Germany)
Roth, Roman (Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria)
Inhalt:
Maximum Junction temperature for switching operation is going to increase. Current assembly and interconnect technologies have to change for module setup that consistently meets reliability requirements at higher temperature and swing in temperature. Cu wire bonding as interconnect for the top side of power semiconductors can overcomes the limits of Al wire bonding. Wire bonds no longer limit lifetime in power cycling. Current capability increases by 70% at constant boundary conditions. Cu wire bonding can also apply to terminal interconnects bringing up its current capabilities.