Evaluation of Insulation Material in Advanced High Power IGBT Modules with Extended Operation Temperature

Konferenz: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
16.03.2010 - 18.03.2010 in Nuremberg, Germany

Tagungsband: CIPS 2010

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Feller, Lydia; Hartmann, Samuel (Daniel Schneider ABB Semiconductors, Lenzburg, Switzerland)
Granata, Davide (Swiss Federal Institute of Technology, Zürich, Switzerland)
Behzadi, Bahar (ABB Forschungszentrum Dättwil, Switzerland)

Inhalt:
Silicone gels are widely used as dielectric insulation in telecommunication, electronics and automotive markets. The reason is found in the unique combination of mechanical and electrical properties, especially the softness, the deformability, and the tackiness of the gel. These properties of the silicone gels make them suitable for the use in the package of insulated gate bipolar transistors. Power dissipation in the device coupled with increased demands due to higher junction temperature and the demand for low temperature storage are challenging the packaging technology of IGBT modules. The investigation focuses on the current insulation material and two alternatives where the electrical and mechanical properties were compared under these more demanding conditions.