Evaluation of commercial SOI driver performances while operated in extreme conditions (150deg C-200deg C)

Konferenz: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
16.03.2010 - 18.03.2010 in Nuremberg, Germany

Tagungsband: CIPS 2010

Seiten: 3Sprache: EnglischTyp: PDF

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Falahi, K. El; Allard, B.; Tournier, D.; Bergogne, D. (Ampere-Lab, Villeurbanne, France)

This paper presents the experimental characterization of commercial SOI MOSFET drivers from room temperature to 200deg C and beyond. Parameters such as current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based driver with the necessary functionality to drive an inverter up to 220deg C ambient temperature.