1200 V 6 A SiC BJTs with very low V(CESAT) and fast switching

Konferenz: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
16.03.2010 - 18.03.2010 in Nuremberg, Germany

Tagungsband: CIPS 2010

Seiten: 5Sprache: EnglischTyp: PDF

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Lindgren, Anders; Domeij, Martin (Transic, Kista, Sweden)

This paper reports measurements and simulations made on 1200V 6A Silicon carbide (SiC) bipolar junction transis-tors. A SPICE model for the transistor has been developed and verified by static and dynamic measurements. Fast switching and low on state losses have been measured and SPICE simulated on the component level. To further describe the impact on a systems level a simplified boost converter has been simulated with regards to power losses and cooling.