AlGaInAs based photonic devices for high-speed data transmission
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Yamamoto, Tsuyoshi; Simoyama, Takasi; Tanaka, Shinsuke; Matsuda, Manabu; Uetake, Ayahito; Okumura, Shigekazu; Ekawa, Mitsuru; Morito, Ken (Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya Atsugi, 243-0197, Japan)
Yamamoto, Tsuyoshi; Simoyama, Takasi; Matsuda, Manabu; Uetake, Ayahito; Ekawa, Mitsuru (Fujitsu Ltd., 10-1 Morinosato-Wakamiya Atsugi, 243-0197, Japan)
Yamamoto, Tsuyoshi; Simoyama, Takasi; Matsuda, Manabu; Uetake, Ayahito; Ekawa, Mitsuru (Photonics Electronics Technology Research Association, 1-20-10 Sekiguchi, Bunkyo-ku, Tokyo)
Inhalt:
Recent results on 1.3-µm-wavelength directly-modulated lasers (DMLs) and semiconductor optical amplifiers (SOAs) using AlGaInAs multi-quantum well (MQW) active layers are reported. DMLs with the concept of distributed reflector structure provide four 25.8-Gbps lasers on LAN-WDM grid operating at 50deg C using the same MQW active layers as well as 40-Gbps modulation at high temperatures. Using an AlGaInAs MQW SOA, a very compact module with low-power-consumption of 0.84W is realized.