Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-Laser

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Moehrle, Martin; Przyrembel, Georges; Bornholdt, Carsten; Sigmund, Ariane; Molzow, Wolf-Dietrich; Klein, Holger (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin, Germany)

1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50deg C and are therefore well suited to be used in 4x25Gb/s systems.