InP Lattice-matched HEMT with Regrown Source/Drain by MOCVD

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)

In this paper, we report the incorporation of Source/Drain regrowth by MOCVD in InAlAs/InGaAs HEMT on InP substrate. Greatly improved RF performance of the device was observed, compared with standard HEMTs with the same layered structure. 1-µm gate-length device exhibits a 34% improvement of cutoff frequency fT and a 74% improvement of maximum oscillation frequency fmax.