High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Rosales, R.; Merghem, K.; Martinez, A.; Ramdane, A. (CNRS Laboratory for Photonics and Nanostructures, Route de Nozay, Marcoussis, France)
Accard, A.; Lelarge, F. (Alcatel-Thales III-V Lab, joint lab of Bell labs and Thales Research & Technology, Route de Nozay, Marcoussis, France)

First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~ 100 GHz are presented. The effects of gain/absorber section lengths and driving conditions on ML characteristics are systematically investigated.