InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Schubert, M.; Yvind, K. (DTU Fotonik, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark)
Kadkhodazadeh, S.; Dunin-Borkowski, R. E. (DTU Center for Electron Nanoscopy, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark)

In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5micrometer region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 µm wavelength at room temperature.