Current-injected Quantum-dot Microdisk Lasers Operating at Room Temperature

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 2Sprache: EnglischTyp: PDF

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Mao, M.-H.; Chien, H. C.; Hong, J. Z. (Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, and Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei 10617, Taiwan)

In this work, we demonstrate current-injected InGaAs quantum dot microdisk lasers operating at room temperature. These microdisk lasers are fabricated by using e-beam lithography, wet etching, and planarization techniques. In measurement at room temperature, the cavity diameter which we observed the lasing phenomenon is 8.5 µm. The threshold current is as low as 1.8 mA.