III-V on Silicon for High-Speed Electronics and CMOS Photonics

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Takenaka, Mitsuru; Takagi, Shinichi (Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan)

We have proposed III-V CMOS photonics platform on which III-V high-speed electronics and III-V photonics are monolithically integrated by heterogeneous integration of III-V semiconductors on Si. III-V MOSFETs and III-V photonic wire device on Si have been successfully demonstrated by using direct wafer bonding.