ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S. (Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan)
Inhalt:
Atomic layer deposited Al2O3 activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m2 without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/mm.