Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Tawil, S. N. M.; Zhou, Y. K.; Krishnamurthy, D.; Emura, S.; Hasegawa, S.; Asahi, H. (The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan)

InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) sapphire substrates or MOVPE-grown GaN templates by plasma-assisted molecular beam epitaxy. Si co-doping into InGaGdN and GaN barrier layers of SL structures were also conducted. Non-existence of secondary phase and the Gd atom substitution of Ga sites were confirmed by X-ray diffraction and X-ray absorption fine structure measurements. Luminescence properties of InGaGdN were also observed at room temperature with the emission peak energy red-shifts corresponding to the InN molar fraction. Clear hysteresis and saturation were observed in the magnetization versus magnetic field (M-H) curves measured at room temperature for the InGaGdN single-layers and InGaGdN/GaN SLs. The magnetic properties of the Gd-doped InGaN are understood to be closely related to the carrier-mediated magnetism.