Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Dumitrescu, Mihail; Guina, Mircea (Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland)
Melanen, Petri (Modulight Inc, Tampere, Finland)

We report on the use of nanoimprint lithography for the fabrication of InP-based laterally-coupled ridge waveguide distributed feedback laser diodes (LC-DFB LDs) emitting around 1550 nm. This is an important wavelength range for telecommunication and LIDAR applications both requiring narrow linewidth emitters. At room temperature the as-cleaved lasers exhibited a side-mode suppression ratio of 50 dB at an output power of 6 mW. The lasers showed ultra-narrow single-mode spectrum with Lorentzian part of the measured linewidth being ~200 kHz. The results obtained prove nanoimprint lithography suitable for the low-cost manufacturing of high performance single-mode laser diodes.