Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active Region
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Shirao, Mizuki; Sato, Takashi; Takino, Yuta; Sato, Noriaki; Nishiyama, Nobuhiko; Arai, Shigehisa (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-12 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
Arai, Shigehisa (Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S3-12 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
A room-temperature continuous-wave operation of a 1.3 µm wavelength transistor laser (TL) with p/n/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 µm and a cavity length of 500 µm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal operation was demonstrated and it can be improved by introducing n/p/n-TLs.