Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substrates

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Khmissi, H.; Naji, K.; Gendry, M. (Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully, France)
Khmissi, H.; Alouane, M. H. Hadj; Ilahi, B.; Maaref, H. (Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences, Avenue de l'environnement, 5019 Monastir, Tunisiades Sciences, Avenue de l'environnement, 5019 Monastir, Tunisia)
Alouane, M. H. Hadj; Chauvin, N.; Bru-Chevallier, C. (Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne, France)
Patriarche, G. (Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, Route de Nozay, 91460 Marcoussis, France)

lnAs/InP core-shell nanowires (NWs) are grown on Si(001) and Si(111) substrates by catalyst assisted molecular beam epitaxy (MBE). Structural characterization of the core-shell NWs shows that the crystallographic structure is pure wurtzite without any stacking faults and that both axial and radial growth occur simultaneously. The investigation of the optical properties reveals that the core-shell NWs are emitting in the telecommunication bands with a radiative lifetime of 5 ns range at 14K. The room temperature photoluminescence (PL) intensity is equal to 5% of the 14K PL intensity confirming the good quality of the NWs.