III-V CMOS: What have we learned from HEMTs?

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A. (Microsystems Technology Laboratories, MIT, Cambridge, MA 02139, USA)
Kim, Dae-Hyun (Teledyne Scientific , Thousand Oaks, CA 91360, USA)

The ability of Si CMOS to continue to scale down transistor size while delivering enhanced logic performance has recently come into question. An end to Moore’s Law threatens to bring to a halt the microelectronics revolution: a historical 50 year run of exponential progress in the power of electronics that has profoundly transformed human society. The outstanding transport properties of certain III-V compound semiconductors make these materials attractive to address this problem. This paper outlines the case for III-V CMOS, harvests lessons from recent research on III-V High Electron Mobility Transistors (HEMTs) and summarizes some of the key challenges in front of a future III-V logic technology.