InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)

We present In0.53Ga0.47As-channel metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) for the first time. Atomic-layer-deposited (ALD) Al2O3 was used as gate dielectric. A low-temperature process was developed to achieve good ohmic contact and maintain material integrity. A 1-µm gate-length device shows a maximum drain current of 415 mA/mm and extrinsic transconductance of 329 mS/mm. The gate leakage current is 7.3 nA/mm at gate bias of -3V, which is six orders of magnitude lower than that of the conventional HEMT using the same heterostructure.